[H-6-2] Strained Ge-rich SiGe Nanowire pFETs with High- κ/Metal Gate Fabricated using Germanium Condensation Technique

Y. Jiang、N. Singh、D.S.H Chan、T.Y. Liow、W.Y. Loh、S. Balakumar、Y. Sun、G.Q. Lo、D.L. Kwong (1.Institute of Microelectronics、2.Silicon Nano Device Lab., Dept of Electrical and Computer Engineering, National University of Singapore)

https://doi.org/10.7567/SSDM.2007.H-6-2