3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiNx Stressor

Wen-Shiang Liao; Sheng-Yi Huang; Kun-Ming Chen; Huan-Chiu Tsen; Lee Chung

doi:https://doi.org/10.7567/SSDM.2007.I-1-2

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[I-1-2] 3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiNx Stressor

Wen-Shiang Liao, Sheng-Yi Huang, Kun-Ming Chen, Huan-Chiu Tsen, Lee Chung (1.United Microelectronic Corporation (UMC), 2.National Nano Device Laboratories (NDL))

https://doi.org/10.7567/SSDM.2007.I-1-2

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