3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiNx Stressor

Wen-Shiang Liao; Sheng-Yi Huang; Kun-Ming Chen; Huan-Chiu Tsen; Lee Chung

doi:https://doi.org/10.7567/SSDM.2007.I-1-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[I-1-2] 3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiNx Stressor

Wen-Shiang Liao、Sheng-Yi Huang、Kun-Ming Chen、Huan-Chiu Tsen、Lee Chung (1.United Microelectronic Corporation (UMC)、2.National Nano Device Laboratories (NDL))

https://doi.org/10.7567/SSDM.2007.I-1-2

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