Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide

Tatsunori Isogai; Hiroaki Tanaka; Tetsuya Goto; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2007.I-1-4

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[I-1-4] Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide

Tatsunori Isogai、Hiroaki Tanaka、Tetsuya Goto、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2007.I-1-4

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