Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide

Tatsunori Isogai; Hiroaki Tanaka; Tetsuya Goto; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2007.I-1-4

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[I-1-4] Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide

Tatsunori Isogai, Hiroaki Tanaka, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2007.I-1-4

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