Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors

Yuta Shiratori; Seiya Kasai

doi:https://doi.org/10.7567/SSDM.2007.I-2-4

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[I-2-4] Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors

Yuta Shiratori, Seiya Kasai (1.Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.2007.I-2-4

▲