[J-1-3] RC-FinFET (Recessed Channel FinFET) Cell Transistor Technology for Future Generation DRAMs

Makoto Yoshida、Jae-Rok Kahng、Joon-Seok Moon、Kyoung-Ho Jung、Keunnam Kim、Hyunju Sung、Chul Lee、Chang-Kyu Kim、Wouns Yang、Donggun Park (1.Advanced Technology Development Team 1、2.Semiconductor R&D Center、3.Samsung Electronics Co.)

https://doi.org/10.7567/SSDM.2007.J-1-3