[J-2-2] Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 G NAND Flash

Daewoong Kang, Sungnam Jang, Kyongjoo Lee, Jinjoo Kim, Dongwon Chang, Hyukje Kwon, Wonseong Lee, Il Han Park, Jun Su Kim, Jae Hong Lee, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin (1.School of Electrical Engineering, Seoul National University, 2.SRAM/FLASH PA Team, Memory Business, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2007.J-2-2