[J-2-2] Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 G NAND Flash

Daewoong Kang、Sungnam Jang、Kyongjoo Lee、Jinjoo Kim、Dongwon Chang、Hyukje Kwon、Wonseong Lee、Il Han Park、Jun Su Kim、Jae Hong Lee、Byung-Gook Park、Jong Duk Lee、Hyungcheol Shin (1.School of Electrical Engineering, Seoul National University、2.SRAM/FLASH PA Team, Memory Business, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2007.J-2-2