[J-2-3] Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers

S. Maikap, P. J. Tzeng, T. Y. Wang, H. Y. Lee, C. H. Lin, S. C. Lo, L. S. Lee, J. R. Yang, M.-J. Kao, M.-J. Tsai (1.Department of Electronic Engineering, Chang Gung University, 2.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 3.Department of Material Science Engineering, National Taiwan University, 4.Material Research Laboratories, Industrial Technology Research Institute, 5.Corresponding author:)

https://doi.org/10.7567/SSDM.2007.J-2-3