[J-2-3] Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers

S. Maikap、P. J. Tzeng、T. Y. Wang、H. Y. Lee、C. H. Lin、S. C. Lo、L. S. Lee、J. R. Yang、M.-J. Kao、M.-J. Tsai (1.Department of Electronic Engineering, Chang Gung University、2.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute、3.Department of Material Science Engineering, National Taiwan University、4.Material Research Laboratories, Industrial Technology Research Institute、5.Corresponding author:)

https://doi.org/10.7567/SSDM.2007.J-2-3