Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot

Yanli Pei; Takafumi Fukushima; Tetsu Tanaka; Mitsumasa Koyanagi

doi:https://doi.org/10.7567/SSDM.2007.J-2-4

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-2-4] Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot

Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (1.International Advanced Research and Education Organization, Tohoku University, 2.Dept. of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.2007.J-2-4

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