[J-7-1] Ru/TiO2/ZrO2/TiN (RIT-TiO2/ZrO2) Capacitor Structure for the 50nm DRAM Device and beyond

Jae-Soon Lim, Ki-Chul Kim, Kwang Hee Lee, Jae Hyoung Choi, Yong Suk Tak, Wan-Don Kim, Jin Yong Kim, Kyuho Cho, Younsoo Kim, Jeong-Hee Chung, Young-Sun Kim, Sung-Tae Kim, Woosung Han (1.Advanced Process Development Team, 2.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2007.J-7-1