[J-7-1] Ru/TiO2/ZrO2/TiN (RIT-TiO2/ZrO2) Capacitor Structure for the 50nm DRAM Device and beyond

Jae-Soon Lim、Ki-Chul Kim、Kwang Hee Lee、Jae Hyoung Choi、Yong Suk Tak、Wan-Don Kim、Jin Yong Kim、Kyuho Cho、Younsoo Kim、Jeong-Hee Chung、Young-Sun Kim、Sung-Tae Kim、Woosung Han (1.Advanced Process Development Team、2.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2007.J-7-1