[J-7-4] Effect of Boron-Nitride Formation at the Interface of Diffusion Barrier in Tungsten Polymetal Gate Stacks on Gate Interfacial Resistance

M. G. Sunga、K. Y. Lim、Y. S. Kim、H. J. Cho、S. R. Lee、S. A. Jang、M. S. Joo、J. H. Lee、T. Y. Kim、T. O. Youn、J. H. Kim、G. O. Kim、Y. T. Hwang、H. S. Yang、J. C. Ku、J. W. Kim (1.R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2007.J-7-4