Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates

T. Matsukawa; Y. X. Liu; K. Endo; M. Masahara; Y. Ishikawa; H. Yamauchi; J. Tsukada; K. Ishii; E. Suzuki

doi:https://doi.org/10.7567/SSDM.2007.P-1-13

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-13] Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates

T. Matsukawa, Y. X. Liu, K. Endo, M. Masahara, Y. Ishikawa, H. Yamauchi, J. Tsukada, K. Ishii, E. Suzuki (1.Nanoelectronics Research Institiute, AIST)

https://doi.org/10.7567/SSDM.2007.P-1-13

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