The Japan Society of Applied Physics

[P-1-13] Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates

T. Matsukawa、Y. X. Liu、K. Endo、M. Masahara、Y. Ishikawa、H. Yamauchi、J. Tsukada、K. Ishii、E. Suzuki (1.Nanoelectronics Research Institiute, AIST)

https://doi.org/10.7567/SSDM.2007.P-1-13