[P-1-15] Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing

Yao-Jen Lee、Bo-An Tsai、Hsin-Yi Peng、Charles Pei-Jer Tzeng、Kuei-Shu Chang-Liao (1.National Nano Device Laboratories、2.Department of Engineering and System Science, National Tsing Hua University、3.Electronics Research & Service Organization, Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2007.P-1-15