[P-1-15] Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing

Yao-Jen Lee, Bo-An Tsai, Hsin-Yi Peng, Charles Pei-Jer Tzeng, Kuei-Shu Chang-Liao (1.National Nano Device Laboratories, 2.Department of Engineering and System Science, National Tsing Hua University, 3.Electronics Research & Service Organization, Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2007.P-1-15