Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy

Y. Naitou; A. Ando; H. Ogiso; S. Kamohara; F. Yano; A. Nishida

doi:https://doi.org/10.7567/SSDM.2007.P-1-24

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-24] Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamohara, F. Yano, A. Nishida (1.National Institute of Advanced Industrial Science and Technology (AIST), 2.MIRAI-Selete)

https://doi.org/10.7567/SSDM.2007.P-1-24

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