[P-1-24] Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy

Y. Naitou、A. Ando、H. Ogiso、S. Kamohara、F. Yano、A. Nishida (1.National Institute of Advanced Industrial Science and Technology (AIST)、2.MIRAI-Selete)

https://doi.org/10.7567/SSDM.2007.P-1-24