Physical and Electrical Properties of Addition Ti into Er2O3 Gate Dielectrics

Tung-Ming Pan; Wei-Hao Hsu; Chung-Chin Huang; Wei-Shiang Huang; Kuo-Chan Huang; Jia-Liang Hong

doi:https://doi.org/10.7567/SSDM.2007.P-1-5

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-5] Physical and Electrical Properties of Addition Ti into Er2O3 Gate Dielectrics

Tung-Ming Pan、Wei-Hao Hsu、Chung-Chin Huang、Wei-Shiang Huang、Kuo-Chan Huang、Jia-Liang Hong (1.Department of Electronic Engineering, Chang Gung University)

https://doi.org/10.7567/SSDM.2007.P-1-5

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