In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF4 Plasma

Wen-Hsiang Sung; Chyuan-Haur Kao; Hsing-Kan Peng; Shang-Feng Huang; Wen-Fa Tsai; Chi-Fong Ai; Chih-Rong Chen; Chao-Sung Lai

doi:https://doi.org/10.7567/SSDM.2007.P-1-6

[P-1-6] In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF4 Plasma

Wen-Hsiang Sung、Chyuan-Haur Kao、Hsing-Kan Peng、Shang-Feng Huang、Wen-Fa Tsai、Chi-Fong Ai、Chih-Rong Chen、Chao-Sung Lai (1.Department of Electronic Engineering, Chang Gung University、2.Physics Division, Institution of Nuclear Energy Research、3.Material Science Service Corporation)

https://doi.org/10.7567/SSDM.2007.P-1-6

2007 International Conference on Solid State Devices and Materials

[P-1-6] In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF4 Plasma