Void Free Room Temperature Silicon Direct Bonding by Sequential Plasma Activated Process

Chenxi Wang; Eiji Higurashi; Tadatomo Suga

doi:https://doi.org/10.7567/SSDM.2007.P-2-14

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-2-14] Void Free Room Temperature Silicon Direct Bonding by Sequential Plasma Activated Process

Chenxi Wang、Eiji Higurashi、Tadatomo Suga (1.Department of Precision Engineering, School of Engineering, The University of Tokyo、2.Research Center for Advanced Science and Technology, The University of Tokyo)

https://doi.org/10.7567/SSDM.2007.P-2-14

▲