[P-3-11] Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc_min of Sub-65nm node Low-Power SRAM

Tung-Hsing Lee、Yean-Kuen Fang、Tony Lin、Elrick Hsu、Tzermin Sheng、Chien-Li Kuo、Osbert Cheng、S C Chien (1.VLSI technology Lab., Institute of Microelectronics, EE Department, National Cheng Kung University、2.United Microelectronics Corporation, Central R&D Division)

https://doi.org/10.7567/SSDM.2007.P-3-11