The Effect of Etch Stop Layer Stress on Negative Bias Temperature Instability of Deep Submicron p-MOSFETs

Ming Shing Chen; Y. K. Fang; T.H Lee; C.T. Lin; Joe Ko; Yau Kae Sheu; Tsong Lin Shen; Wen Yi Liao

doi:https://doi.org/10.7567/SSDM.2007.P-3-13

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-13] The Effect of Etch Stop Layer Stress on Negative Bias Temperature Instability of Deep Submicron p-MOSFETs

Ming Shing Chen、Y. K. Fang、T.H Lee、C.T. Lin、Joe Ko、Yau Kae Sheu、Tsong Lin Shen、Wen Yi Liao (1.Institute of Microelectronics, National Cheng Kung University、2.United Microelectronics Corporation (UMC), Specialty Technology Division)

https://doi.org/10.7567/SSDM.2007.P-3-13

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