Accurate Extraction of Mobility, Effective Channel Length, and Source/Drain Resistance in 60 nm MOSFETs

Junsoo Kim; Jaehong Lee; Yeonam Yun; Byung-Gook Park; Jong Duk Lee; Hyungcheol Shin

doi:https://doi.org/10.7567/SSDM.2007.P-3-19

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-19] Accurate Extraction of Mobility, Effective Channel Length, and Source/Drain Resistance in 60 nm MOSFETs

Junsoo Kim, Jaehong Lee, Yeonam Yun, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin (1.Nano Systems Institutes, and School of EE, Seoul National University)

https://doi.org/10.7567/SSDM.2007.P-3-19

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