Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs

Rihito Kuroda; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2007.P-3-4

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-4] Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs

Rihito Kuroda、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University、3.JSPS Research Fellow (DC1))

https://doi.org/10.7567/SSDM.2007.P-3-4

▲