In-situ comparison of Si/High-K and Si/SiO2 interface properties in FD SOI MOSFETs operated at low temperature

L. Pham-Nguyen; C. Fenouillet-Beranger; S. Cristoloveanu; A. Vandooren; M. Orlowski; G. Ghibaudo

doi:https://doi.org/10.7567/SSDM.2007.P-3-5

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-5] In-situ comparison of Si/High-K and Si/SiO2 interface properties in FD SOI MOSFETs operated at low temperature

L. Pham-Nguyen, C. Fenouillet-Beranger, S. Cristoloveanu, A. Vandooren, M. Orlowski, G. Ghibaudo (1.IMEP-INPG MINATEC, 2.FREESCALE Semiconductors, 3.ST Microelectronics)

https://doi.org/10.7567/SSDM.2007.P-3-5

▲