SiGe Recessed Source-Drain (RSD) Stressors for PMOS: Effect of Device Integration Flow and Increased Ge Content on Electrical Performance

V. Machkaoutsan; P. Verheyen; P. Tomasini; G. Eneman; R. Loo; P. Absil; S.G. Thomas; J.P. Lu; J.W. Weijtmans; R. Wise

doi:https://doi.org/10.7567/SSDM.2007.P-3-7

[P-3-7] SiGe Recessed Source-Drain (RSD) Stressors for PMOS: Effect of Device Integration Flow and Increased Ge Content on Electrical Performance

V. Machkaoutsan、P. Verheyen、P. Tomasini、G. Eneman、R. Loo、P. Absil、S.G. Thomas、J.P. Lu、J.W. Weijtmans、R. Wise (1.ASM Belgium N.V.、2.IMEC、3.ASM America Inc.、4.Catholic University of Leuven、5.Fund for scientific research Flanders、6.Texas Instruments assignee to IMEC、7.Texas Instruments)

https://doi.org/10.7567/SSDM.2007.P-3-7

2007 International Conference on Solid State Devices and Materials

[P-3-7] SiGe Recessed Source-Drain (RSD) Stressors for PMOS: Effect of Device Integration Flow and Increased Ge Content on Electrical Performance