[P-4-1] Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications

T.-Y. Wang, S. Maikap, P. J. Tzeng, D. Panda, L. S. Lee, M.-J. Tsai, J.-R. Yang (1.Department of Material Science Engineering, National Taiwan University, 2.Department of Electronic Engineering, Chang Gung University, 3.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2007.P-4-1