Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications

T.-Y. Wang; S. Maikap; P. J. Tzeng; D. Panda; L. S. Lee; M.-J. Tsai; J.-R. Yang

doi:https://doi.org/10.7567/SSDM.2007.P-4-1

[P-4-1] Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications

T.-Y. Wang、S. Maikap、P. J. Tzeng、D. Panda、L. S. Lee、M.-J. Tsai、J.-R. Yang (1.Department of Material Science Engineering, National Taiwan University、2.Department of Electronic Engineering, Chang Gung University、3.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2007.P-4-1

2007 International Conference on Solid State Devices and Materials

[P-4-1] Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications