[P-4-3] Electronic characteristics of charge trapping memory using Al2O3 dielectric

Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, Y. T. Kim, S. H. Pyi, H. Y. Cho, T. G. Kim (1.Dept. of Electronics Eng., Korea Univ., 2.Advenced Process division, Hynix Semiconductor Inc., 3.Dept. of Physics, Dongguk Univ.)

https://doi.org/10.7567/SSDM.2007.P-4-3