Electronic characteristics of charge trapping memory using Al2O3 dielectric

Y. J. Seo; K. C. Kim; H. D. Kim; M. S. Joo; Y. T. Kim; S. H. Pyi; H. Y. Cho; T. G. Kim

doi:https://doi.org/10.7567/SSDM.2007.P-4-3

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-4-3] Electronic characteristics of charge trapping memory using Al2O3 dielectric

Y. J. Seo、K. C. Kim、H. D. Kim、M. S. Joo、Y. T. Kim、S. H. Pyi、H. Y. Cho、T. G. Kim (1.Dept. of Electronics Eng., Korea Univ.、2.Advenced Process division, Hynix Semiconductor Inc.、3.Dept. of Physics, Dongguk Univ.)

https://doi.org/10.7567/SSDM.2007.P-4-3

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