[P-6-5] High performance 50 nm In0.65Al0.35As/In0.75Ga0.25As Metamorphic HEMTs with Si3N4 passivation on thin InGaAs/InP layer

Seong-Jin Yeon、Jeongmin Seong、Myunghwan Park、Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

https://doi.org/10.7567/SSDM.2007.P-6-5