High performance 50 nm In0.65Al0.35As/In0.75Ga0.25As Metamorphic HEMTs with Si3N4 passivation on thin InGaAs/InP layer

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Seong-Jin Yeon, Jeongmin Seong, Myunghwan Park, Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)