A Physics-based Compact Model for I-MOS Transistors

Chen Shen; Eng-Huat Toh; Jianqiang Lin; Chun-Huat Heng; Dennis Sylvester; Ganesh Samudra; Yee-Chia Yeo

doi:https://doi.org/10.7567/SSDM.2007.P-9-6

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-9-6] A Physics-based Compact Model for I-MOS Transistors

Chen Shen、Eng-Huat Toh、Jianqiang Lin、Chun-Huat Heng、Dennis Sylvester、Ganesh Samudra、Yee-Chia Yeo (1.Silicon Nano Device Lab, Dept. of ECE, National University of Singapore (NUS)、2.Department of EECS, University of Michigan)

https://doi.org/10.7567/SSDM.2007.P-9-6

▲