[A-1-1] Control of Interface Properties of High-k/Ge with GeO₂ Interface Layer (Invited)

K. Kita¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2008.A-1-1