[A-6-3] Formation of Low Resistive S/D-Extension using Carborane Molecular Ion Implantation for Sub-45-nm PMOSFET S. Endo1, Y. Kawasaki1, T. Yamashita1, H. Oda1, Y. Inoue1 (1.Renesas Tech. Corp., Japan) https://doi.org/10.7567/SSDM.2008.A-6-3