[A-6-3] Formation of Low Resistive S/D-Extension using Carborane Molecular Ion Implantation for Sub-45-nm PMOSFET

S. Endo¹、Y. Kawasaki¹、T. Yamashita¹、H. Oda¹、Y. Inoue¹ (1.Renesas Tech. Corp., Japan)

https://doi.org/10.7567/SSDM.2008.A-6-3