Schottky-Barrier Height Tuning of Nickel Silicide on Epitaxial Silicon-Carbon Films with High Substitutional Carbon Content

P. S. Y. Lim; R. T. P. Lee; A. E. J. Lim; A. T. Y. Koh; M. Sinha; D. Z. Chi; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2008.A-6-4

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-6-4] Schottky-Barrier Height Tuning of Nickel Silicide on Epitaxial Silicon-Carbon Films with High Substitutional Carbon Content

P. S. Y. Lim¹、R. T. P. Lee¹、A. E. J. Lim¹、A. T. Y. Koh¹、M. Sinha¹、D. Z. Chi²、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng., Singapore)

https://doi.org/10.7567/SSDM.2008.A-6-4

▲