Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications

G. Bidal; F. Boeuf; F. Payet; S. Denorme; N. Loubet; P. Perreau; C. Mezzomo; M. Marin; D. Fleury; C. Leyris; F. Leverd; P. Gouraud; C. Laviron; R. Beneyton; A. Torres; B. Imbert; D. Delille; L. Clement; G. Ghibaudo; T. Skotnicki

doi:https://doi.org/10.7567/SSDM.2008.A-7-1

[A-7-1] Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications

G. Bidal^1,3、F. Boeuf¹、F. Payet¹、S. Denorme¹、N. Loubet¹、P. Perreau²、C. Mezzomo^1,3、M. Marin¹、D. Fleury^1,3、C. Leyris¹、F. Leverd¹、P. Gouraud¹、C. Laviron²、R. Beneyton¹、A. Torres²、B. Imbert¹、D. Delille⁴、L. Clement¹、G. Ghibaudo³、T. Skotnicki¹ (1.STMicroelectronics、2.CEA-LETI、3.IMEP, France、4.FEI, Netherlands)

https://doi.org/10.7567/SSDM.2008.A-7-1

2008 International Conference on Solid State Devices and Materials

[A-7-1] Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications