The Japan Society of Applied Physics

[A-7-1] Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications

G. Bidal1,3、F. Boeuf1、F. Payet1、S. Denorme1、N. Loubet1、P. Perreau2、C. Mezzomo1,3、M. Marin1、D. Fleury1,3、C. Leyris1、F. Leverd1、P. Gouraud1、C. Laviron2、R. Beneyton1、A. Torres2、B. Imbert1、D. Delille4、L. Clement1、G. Ghibaudo3、T. Skotnicki1 (1.STMicroelectronics、2.CEA-LETI、3.IMEP, France、4.FEI, Netherlands)

https://doi.org/10.7567/SSDM.2008.A-7-1