[A-9-5] Extended EOT Scalability of HfON/SiON Gate Stack Down to 0.57 nm with High Carrier Mobility by Post-Deposition Annealing

D. Ishikawa¹, S. Kamiyama¹, E. Kurosawa¹, T. Aoyama¹, Y. Nara¹ (1.Selete, Japan)

https://doi.org/10.7567/SSDM.2008.A-9-5