[A-9-5] Extended EOT Scalability of HfON/SiON Gate Stack Down to 0.57 nm with High Carrier Mobility by Post-Deposition Annealing

D. Ishikawa¹、S. Kamiyama¹、E. Kurosawa¹、T. Aoyama¹、Y. Nara¹ (1.Selete, Japan)

https://doi.org/10.7567/SSDM.2008.A-9-5