[B-1-4] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs

K. Morii¹, S. Dissanayake¹, S. Tanabe¹, R. Nakane¹, M. Takenaka¹, S. Sugahara², S. Takagi¹ (1.Univ. of Tokyo, 2.Tokyo Tech., Japan)

https://doi.org/10.7567/SSDM.2008.B-1-4