[B-1-5] Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Q. Rafhay¹、R. Clerc¹、G. Pananakakis¹、G. Ghibaudo¹ (1.IMEP, France)

https://doi.org/10.7567/SSDM.2008.B-1-5