[B-6-2] Thin-Metal Inserted Single-phase Ni-FUSI(MISF) and High-k Gate Stack for Productive LSTP CMOS Application

Y. Yamamoto¹、Y. Nishida¹、K. Satoh¹、T. Kawahara¹、S. Sakashita¹、M. Mizutani¹、S. Yamanari¹、Y. Ariyama¹、Y. Miyagawa¹、N. Murata¹、T. Sakai¹、M. Inoue¹、J. Yugami¹、S. Ogino¹、K. Eikyu¹、T. Hayashi¹、S. Endo¹、T. Yamashita¹、H. Oda¹、Y. Inoue¹、H. Fujimoto²、Y. Sato²、T. Oosuka²、A. Tsudumitani²、Y. Moriyama²、K. Nakanishi²、J. Hirase²、T. Yamada²、H. Ogawa²、Y. Mori² (1.Renesas Tech. Corp.、2.Matsushita Electric Industrial Co., Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.B-6-2