The Japan Society of Applied Physics

[B-6-3] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface

R. Kuroda1, A. Teramoto1, T. Suwa1, Y. Nakao1, S. Sugawa1, T. Ohmi1,2 (1.Tohoku Univ., 2.WPI Research Center, Japan)

https://doi.org/10.7567/SSDM.2008.B-6-3