[B-6-3] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface
R. Kuroda1, A. Teramoto1, T. Suwa1, Y. Nakao1, S. Sugawa1, T. Ohmi1,2
(1.Tohoku Univ., 2.WPI Research Center, Japan)
https://doi.org/10.7567/SSDM.2008.B-6-3