[B-6-3] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface

R. Kuroda¹、A. Teramoto¹、T. Suwa¹、Y. Nakao¹、S. Sugawa¹、T. Ohmi^1,2 (1.Tohoku Univ.、2.WPI Research Center, Japan)

https://doi.org/10.7567/SSDM.2008.B-6-3